The effects of 0.1 and 0.5‐nm Al and 0.02‐nm Ti interlayers on the Sb/(HgCd)Te system have been investigated with photoelectron spectroscopy using synchrotron radiation. With no interlayer, the Sb forms an abrupt, uniform overlayer with a stoichiometric interface and causes no change in the band bending induced during the cleaving process. With the two Al interlayers Sb exhibits less uniform deposition and diffuses into the semiconductor enough to reverse the additional band bending caused by Al in‐diffusion. It also reacts with the elemental Al of the 0.5‐nm interlayer to form AlSb. The increased disruption of the (HgCd)Te surface by the Ti interlayer leads to enhanced out‐diffusion of Te in addition to Sb clustering and in‐diffusion. In this case, Sb is able to compensate for the inversion occurring during cleavage and returns the surface to a nearly flat‐band condition.
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机译：利用同步辐射的光电子能谱研究了0.1和0.5‐nm Al和0.02‐nm Ti中间层对Sb/（HgCd）Te体系的影响.在没有夹层的情况下，Sb 形成一个具有化学计量界面的突然、均匀的覆盖层，并且不会导致切割过程中诱导的带弯曲发生变化。使用两个 Al 中间层时，Sb 表现出不太均匀的沉积，并且扩散到半导体中足以逆转由 Al in‐扩散引起的额外能带弯曲。它还与0.5&连字符nm夹层的元素Al反应形成AlSb。Ti 夹层对 （HgCd）Te 表面的破坏增加导致 Te 的外连字符扩散增强，此外还有 Sb 聚集和连字符内扩散。在这种情况下，Sb能够补偿解理过程中发生的反转，并使表面恢复到几乎平坦的连字符带状态。
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