Fermi-level pinning position at the Au-lnAs interface determined using ballistic electron emission microscopy

摘要

Ballistic electron emission microscopy (BEEM) has been used to determine the Fermi-level pinning position at the Au/InAs interface. Using BEEM's three-terminal capabilities, collector current-Voltage scans were taken on Au/InAs/AISb samples. The extracted BEEM threshold values (1.22 eV) correspond to the highest energy band position in the conduction band at the InAs/AISb interface. By subtracting the InAs/A1Sb conduction-band offset ( 1.35 eV), an estimate of the Au Fermi-level position on InAs is obtained (0.13 eV). # 1997 American Institute of Physics. S0003-6951 (97)03406-2