Gallium acceptor incorporation in molecular beam epitaxial germanium on GaAs

摘要

Conditions for le;1021cmminus;3gallium dopedphyphen;type germanium films on vicinal (100) GaAs substrates are reported. Steady state gallium concentrations are linearly related to incident fluxes. Between 470 and 650thinsp;deg;C, incorporation is by thermodynamic distribution between accumulated surface concentrations and growing films. The distribution function favors higher incorporation with increasing temperature, however surface concentrations are significantly reduced by desorption above 550thinsp;deg;C. Kinetic limitations produce a retrograde temperature dependence of the distribution below sim;460thinsp;deg;C.