The growth rate of laserhyphen;photoenhanced thermally grown native oxides of InP in a N2O ambient and its dependence on growth condition are presented. Increased laser power, substrate temperature, and N2O pressure are observed to increase the growth rate. The topography and the composition of these oxides have been studied, using secondary electron microscopy and xhyphen;ray photoemission spectroscopy, respectively. The oxide layers contain In2O3and a phosphate, probably InPO4. The enhanced growth appears to be caused by both excited oxidizing species and a photonhyphen;enhanced surface reaction.
展开▼
