Strainedhyphen;layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy

摘要

InSb/GaSb quantum well structures have been prepared by atmospheric pressure metalorganic vapor phase epitaxy. Strong sharp photoluminescence emission peaks with a full width at halfhyphen; maximum of 6ndash;11 meV were obtained for the quantum well structures with well thicknesses of 0.35ndash;0.88 nm, suggesting nearly atomically planar interfaces. The observed photoluminescence transition energies are in excellent agreement with the calculated values using a standard finite square well model taking into account strain. A broadening of the predominant photoluminescence emission peak was observed for quantum well structures with well thicknesses above 1 nm, indicating nonplanar growth.