The scanning electron microscope copper‐detector technique introduced most recently by H. Gong and C. K. Ong J. Appl. Phys.75, 449 (1994) is employed for the investigation of charging on facesm{101¯0},R{101¯1}, and khgr; {516¯1} of single‐crystalline agr;‐quartz. It is found that the charging ability decreases in the order ofm,R, and khgr;, revealing the dependence of charging on crystallographic orientations, and these results are confirmed by the well‐established mirror‐image method. In addition, the experimental results also suggest that not only electron‐irradiation‐induced defects but also intrinsic defects are responsible for charge trapping.
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机译:H. Gong 和 C. K. Ong [J. Appl. Phys.75, 449 (1994)] 最近引入的扫描电子显微镜铜&连字符检测器技术用于研究单&连字符&agr;‐石英的面m{101 ̄0},R{101 ̄1}和&khgr; {516 ̄1}。研究发现,电荷能力依次为m、R和&khgr;,揭示了电荷对晶体取向的依赖性,这些结果被完善的镜像法所证实。此外,实验结果还表明,不仅电子&连字符&照射&连字符诱导缺陷,而且本征缺陷也是电荷俘获的原因。
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