Effects of post‐deposition argon implantation on the memory properties of plasma‐deposited silicon nitride films

摘要

Post‐deposition ion implantation has been used to introduce argon into plasma‐enhanced chemically vapor deposited silicon nitride films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the metal‐silicon nitride‐silicon oxide‐silicon structure. Argon was implanted into the SiH4‐NH3‐N2deposited films at energies ranging from 25 to 75 keV, current densities ranging from 0.1 to 75 mgr;A/cm2and fluences ranging from 1×1012to 1×1016ions/cm2. Physical properties of the films were studied by ellipsometry and infrared spectroscopy, while high frequency capacitance‐voltage (C‐V) curves were used to obtain programming, retention, and endurance characteristics.