Deep level spectroscopy inp‐GaSe single crystals

摘要

Deep levels have been examined in nonintentionally dopedp‐type gallium selenide single crystals using photoinduced current transient spectroscopy measurements. Two hole trapping levels at 0.20 and 0.80 eV above the valence band have been observed and the corresponding thermal capture cross section evaluated. The possible origin and nature of these centers are also discussed.