The deformation of Si‐doped GaAs single crystals with a carrier concentration of 1018cm−3was investigated by determining the stress/strain relationships for agr; and bgr; bending at 500 °C. Marked differences were found between the agr; and bgr; deformation curves. Using Gilman and Johnston’s model for dislocation multiplication and combining it with a linear relationship between the dislocation velocity and applied stress, a theoretical model was developed to explain the above‐mentioned differences in terms of dislocation mobilities mgr;, dislocation multiplication factorsC, activation stresses tgr;a, and the initial densities of dislocation sources rgr;0. Applying a numerical curve fitting procedure to the experimental curves, these parameters were found to have the following values for agr; and bgr; bending, respectively: mgr;agr;=8.5×10−12and mgr;bgr;=3.8×10−12cm3 dyn−1 sec−1;Cagr;=89 andCbgr;=130 cm−1; tgr;aagr;=2.11×108and tgr;abgr;=2.7×108dyn cm−2; rgr;0agr;=9×105and rgr;0bgr;=4.5×102cm−2.
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