Improved band alignment for hole injection by an interfacial layer in organic light emitting devices

摘要

We demonstrate that a thin organic interfacial layer of 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) can be utilized to improve the band alignment of N,N′-di-(3-methylphenyl)-N,N'diphenyl-4,4'diaminobiphenyl (TPD) films on indium-tin-oxide (ITO) (InSnO) substrates in, e.g., organic electroluminescent devices. A photoemission study of the highest occupied molecular orbital (HOMO) and vacuum level position as a function of the organic overlayer thickness reveals that due to chemisorptive bonding a thin PTCDA interlayer results in a reduced barrier between the Fermi level of ITO and the HOMO of TPD. Furthermore we detect a new molecular state 0.6 eV below the Fermi level at the PTCDA/ITO interface. Both effects are expected to improve the hole injection from the ITO anode into the TPD hole transport layer, e.g., in organic light emitting devices.