2.12 μm InGaAs-InGaAlAs-InP diode lasers grown in solid-source molecular-beam epitaxy

摘要

We have fabricated InGaAs-InGaAlAs-InP strained quantum well lasers with wavelength as long as 2.12 μm in solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 780 A/cm~(2) at room temperature and a characteristic temperature of 48 K have been achieved.