TheX‐valley transport in GaAs/AlAs triple barrier structures

摘要

Electron transport through theXvalley of GaAs/AlAs triple‐barrier structures (TBS) grown by molecular‐beam epitaxy has been studied. Negative differential resistance is observed at 77 K in one type of TBS and is identified as the result of electron transport through both the Ggr; andXvalleys of TBS. In another type of TBS, resonant tunneling through theXvalley of GaAs/AlAs TBS is observed. The Ggr; andXenergy‐band profiles under bias have been calculated in order to identify the observed features.