Measurements on the Hall and the magnetoresistive effect in Fehyphen;Si amorphous films are described. The spontaneous Hall constantRsincreases as the Si content increases. A sensitive irreversible change ofRswas observed by annealing.Rsincreases by crystallization. The magnetoresistive effect Dgr;rgr;/rgr; is low but Dgr;rgr; is comparable to those of Fehyphen;Ni crystalline alloys.
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