We present an in situ study of the formation of the interfaces between TiO_(2) and SiO_(2) evaporated thin films using spectroscopic ellipsometry and x-ray photoemission spectroscopy (XPS). The growth of TiO_(2) on SiO_(2) was studied previously, but the reverse case has not received much attention up to now. In this article, we show that a common description is valid for both interfaces, which are formed by crosslinking Ti-O-Si bonds. We show also that the growth of TiO_(2) on SiO_(2) begins with an amorphous interface layer even when growth occurs at 400℃. The interface is sharp, a few angstroms, as determined by angular XPS; when SiO_(2) grows on TiO_(2), the interface is thicker, about 10 A. Roughness and interdiffusion play roles in interface formation and their role will be discussed.
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