...
首页> 外文期刊>Applied physics letters >Exciton-exciton interaction engineering in coupled GaN quantum dots
【24h】

Exciton-exciton interaction engineering in coupled GaN quantum dots

机译:Exciton-exciton interaction engineering in coupled GaN quantum dots

获取原文
获取原文并翻译 | 示例
           

摘要

We present a fully three-dimensional study of the multiexciton optical response of vertically coupled GaN-based quantum dots via a direct-diagonalization approach. The proposed analysis is crucial in understanding the fundamental properties of few-particle/exciton interactions and, more important, may play an essential role in the design/optimization of semiconductor-based quantum information processing schemes. In particular, we focus on interdot exciton-exciton coupling, the key ingredient in recently proposed all-optical quantum processors. Our analysis demonstrates that there is a large window of realistic parameters for which both biexcitonic shift and oscillator strength are compatible with such implementation schemes. (C) 2002 American Institute of Physics. References: 17

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号