A selfhyphen;consistent analysis of temperaturehyphen;dependent fieldhyphen;effect measurements in hydrogenated amorphous silicon thinhyphen;film transistors

摘要

We calculated a more accurate density of states (DOS) profile from fieldhyphen;effect (FE) measurements in hydrogenated amorphous silicon thinhyphen;film transistors, taking into account the anomalously changing conductivity prefactor in accordance with the Meyerndash;Neldel (MN) rule. We present a selfhyphen;consistent analysis of the density of gap states profile, where the MN rule is, for the first time, properly considered in relation to the nonuniform shift of the Fermi level as induced by the field effect. Moreover, the calculation yields the correct flathyphen;band voltage and the corresponding flathyphen;band activation energy. The determination of conductivity activation energies free from any initial band bending effects is of importance in all types of transport measurements.