Diffusion of zinc in gallium arsenide: A new model

摘要

Experimental results on the diffusion of Zn in GaAs which could not be satisfactorily explained in terms of a Frankndash;Turnbull mechanism involving vacancies can be understood with a rsquo;rsquo;kickhyphen;out modelrsquo;rsquo; in which the equilibrium between interstitial and substitutional Zn is established via gallium interstitials.