Intervalley scattering in Ga1−xAlxAs alloys

摘要

Hall mobility at 300 K in high‐purity epitaxial layers ofn‐type Ga1−xAlxAs with electron concentrations in the range (5–10)×1015cm−3has been measured as a function of alloy compositions in the range 0⩽x⩽0.78 and as a function of hydrostatic pressure for various values of alloy compositions. The data show that nonequivalent intervalley scattering between the direct and various indirect minima play an important role in limiting the electron mobility in this alloy.