Evidence of the origin of infrared scattering in GaAs with highhyphen;resolution infrared tomography

摘要

Transmission electron microscopy andAhyphen;Betching are the usual methods to observe microprecipitates in GaAs substrates. More recently, tomography has been used to characterize GaAs wafers and infrared light scattering was assumed to be caused by microprecipitates. Work on highhyphen;resolution tomography which confirms this assumption is presented in this paper.