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Resonance Raman study of annealing in cadmiumhyphen;implanted cuprous oxide

机译:Resonance Raman study of annealing in cadmiumhyphen;implanted cuprous oxide

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摘要

A resonance Raman scattering study is presented of the annealing behavior of Cu2O implanted with 180hyphen;keV Cd++ions to a dose of 1times;1014ions/cm2. As annealing progressed, large changes were observed in the Raman spectra which were obtained with the 488hyphen; and 476.5hyphen;nm lines of an argon laser to provide excitation nearly resonant with the 1S rsquo;rsquo;bluersquo;rsquo; exciton at 480 nm. A detailed comparison is made of the spectra obtained during annealing with spectra previously reported on unannealed samples implanted with doses ranging from 1.5times;1011to 1.5times;1015ions/cm2. The analysis indicates a strong annealing stage at minus;250deg;C, after which apparently less than 1percnt; of the implantationhyphen;produced damage remains.

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  • 来源
    《journal of applied physics 》 |1976年第12期| 5467-5469| 共页
  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
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