Deep penetration of donors has been observed as a result of 20hyphen;kV Sb ion implantations into lang;110rang;hyphen; and lang;111rang;hyphen;oriented, highhyphen;resistivity silicon. The density profiles were measured by a capacitancehyphen;voltage method. The deep penetrating tail was found to be independent of such experimental parameters as temperature of implant (forTge; 300deg;C), orientation, annealing, and surface condition; and to empirically follow aNprop; (xplus;B)2.2dependence over four orders of magnitude (Bap; 0.15 mgr;). This component has not been observed previously in silicon and has a different dependence on implantation parameters and a different functional form than that observed in ion channeling.
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