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Developmental experiments on large‐area silicon solar cells

机译:大面积硅太阳能电池的开发实验

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摘要

A comprehensive design/material/technological study was conducted with the aim of obtaining high‐efficiency back‐surface‐field‐ (BSF‐) type bifacial solar cells withreproducibleparameters onlarge‐arean‐ andp‐silicon wafers. Practical ways of attenuating the severe limitations imposed by different kinds of areal inhomogeneities on the electro‐optical performance of large‐area BSF single‐crystal silicon solar cells are described and tested experimentally. Various procedures leading to a substantial increase of both the emitter and the base contributions to the generated photocurrent are implemented and discussed in detail. Thep+‐n‐n+andn+‐p‐p+cells were processed as bifacial devices and tested under both front and backside AM1 illumination. The trial devices were fabricated on 2‐in and 3‐in. commercially available lower‐grade silicon and the minimization of the cell cost was one of the sought‐after objectives. The combination of simple design/technological approaches described in this work has ultimately led to the development oflow‐cost,high‐efficiency(17–18) large‐area silicon solar cells with good overall electro‐optical performance as bifacial devices. The results of this work show clearly that simple, but adequately designed/processed cells fabricated on an industrial scale on large‐area silicon wafers could possess parameters similar to those of sophisticated laboratory samples elaborated on small‐area silicon. With the design/technological approaches outlined in this work, the use of even cheaper, i.e., lower‐grade single‐crystal silicon, could still yield 2‐ and 3‐in. cells with fairly acceptable conversion efficiencies.
机译:为了获得高效率的双面太阳能电池,在大型硅片上具有可重复参数的硅片,进行了全面的设计/材料/工艺研究。通过实验,描述了减轻不同种类的面不均匀性对大面积BSF单晶硅太阳能电池的电光性能的严重限制的实用方法。实施并详细讨论了导致发射器和基极对产生的光电流的贡献大幅增加的各种程序。将p+‐n‐n+andn+‐p‐p+细胞处理为双面器件,并在正面和背面AM1照明下进行测试。试验设备是在 2&连字符和 3&连字符 in 上制造的。市售的低连字符级硅和电池成本的最小化是人们追捧的目标之一。本文中描述的简单设计/技术方法的结合最终导致了低成本、高效率(17%–18%)大面积硅太阳能电池的发展,这些硅太阳能电池具有良好的整体电光性能作为双面器件。这项工作的结果清楚地表明,在大面积硅晶圆上以工业规模制造的简单但设计充分的电池可以具有与在小连字符硅上精心制作的复杂实验室样品相似的参数。通过这项工作中概述的设计/技术方法,使用更便宜的,即低级单晶硅,仍然可以产生 2&连字符;和 3&连字符;in。具有相当可接受的转换效率的细胞。

著录项

  • 来源
    《journal of applied physics》 |1989年第9期|3680-3686|共页
  • 作者

    Andrei P. Silard; Gabriel Nani;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
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