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首页> 外文期刊>journal of applied physics >Photoluminescence study of ZnSendash;ZnTe strainedhyphen;layer superlattices grown on InP substrates
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Photoluminescence study of ZnSendash;ZnTe strainedhyphen;layer superlattices grown on InP substrates

机译:Photoluminescence study of ZnSendash;ZnTe strainedhyphen;layer superlattices grown on InP substrates

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Optical properties of ZnSendash;ZnTe strainedhyphen;layer superlattice (SLS) grown on InP substrates were evaluated by photoluminescence. The luminescence peak intensity and position were affected by the photoexcitation intensity. The line shape was also affected by the growth temperature. The peak position was shifted by tailoring the structure of the superlattice, but it did not correlate exactly with previously reported theoretical values. We have reconsidered their data, and a better result on theoretical calulation was achieved. The luminescence color changed in the visible region from green to red. This SLS could be a new material for optoelectronic devices.

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