High-Speed 985 nm Bottom-Emitting VCSEL Arrays for Chip-to-Chip Parallel Optical Interconnects

摘要

For chip-scale interconnection, 4 times 12 vertical-cavity surface-emitting laser (VCSEL) arrays have been optimized. Each flip-chip bondable bottom-emitting oxide-confined 985 nm VCSEL have integrated backside lenses, and is capable of modulation at 20 Gb/s with a low current density of only 9.9 kA/cm2. An aggregate data rate of 960 Gb/s was obtained from a chip area of only 1.4 mm times 3.75 mm, or 18.3 Tb/(sldrcm2).