Electron density in quantum well diodes

摘要

A selfhyphen;consistent calculation of the electron density and conductionhyphen;band edge is presented. The timehyphen;independent Schrouml;dinger and Poisson equations are solved simultaneously under a high applied bias for structures with thick, lightly doped spacer layers. It is shown that strongly localized states occur in the well and accumulation regions. These states are capable of trapping a substantial amount of charge, which in turn can drastically change the shape of the band edge, and therefore need to be included in studies of the resonant tunneling problem in which the Coulomb interaction must be accounted for.