We present a model of the production of deep centers and their reactions following electron irradiations in InP. We propose that the dominant hole traps inp‐InP and electron traps inp+nInP junctions are complexes between shallow acceptors and a common intrinsic entity, the phosphorus interstitial or vacancy. The reactions observed below and above room temperature are then due to a local mobility of this entity, which can be obtained as well by thermal as by electronic stimulation of the reactions. This model implies the long‐range migration (at least down to 16 K) of this entity, and explains the strongly different behavior ofn‐InP compared top‐InP samples.
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