Fine line aluminum etching in air and in solution using a tunable dye laser

摘要

We report results of using a pulsed, tunable laser to etch fine patterned aluminum lines on a silicon integrated circuit. Wavelengths from 2850 and 5730 A˚ were investigated for aluminum etching, both in air and in solution. Air ablation at the shortest wavelength was found to be most effective in selectively removing aluminum while least damaging the underlying silicon dioxide insulator layer. Complimentary metal oxide semiconductor inverter test circuits worked successfully after laser etching of selected aluminum links.