Luminescence of Sihyphen;implanted InP after rapid lamp annealing was studied. It was found that the intensity and energy of bandhyphen;tohyphen;band roomhyphen;temperature luminescence were good indicators of the quality of annealing and activation of Si donors. Shallow and deep level spectral features characteristic of Si implantation and good annealing were observed in the lowhyphen;temperature spectra. It was found that the best results could be obtained only in the case of hot implantation and lamp annealing in regimes close to the melting point of the InP, whereas roomhyphen;temperature implantation and oven annealing were much less effective.
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