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首页> 外文期刊>IEEE journal of selected topics in quantum electronics: A publication of the IEEE Lasers and Electro-optics Society >High-Power and Broadband Quantum Dot Superluminescent Diodes Centered at 1250 nm for Optical Coherence Tomography
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High-Power and Broadband Quantum Dot Superluminescent Diodes Centered at 1250 nm for Optical Coherence Tomography

机译:High-Power and Broadband Quantum Dot Superluminescent Diodes Centered at 1250 nm for Optical Coherence Tomography

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摘要

Quantum dot (QD) superluminescent diodes (SLDs) exhibiting 8 mW and 95 nm full-width at half-maximum centered at 1270 nm are demonstrated with a flat-topped spectral profile. This is achieved using $3 times 2$ dots in compositionally modulated wells technique. Furthermore, techniques for realization of high-power SLDs are also demonstrated. A continuous-wave output power of 42 mW is achieved for narrowband devices centered at 1250 nm.

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