Cleavage energies in semiconductors

摘要

We present a method for the calculation of the surface and cleavage energies,Eggr;, for semiconductors, based on a tight‐binding Green’s function approach and a difference‐equation solution for the layered structure. Energies are calculated for a representative group of semiconductors, and cleavage energies are found to agree well with the available experimental data. We findESiggr;(111)=1360 ergs/cm2, andEggr;(110)=1000, 180, and 120 ergs/cm2for GaAs, CdTe, and HgTe, respectively.