Formation of cellular defect structure on GaSb ion-implanted at low temperature

摘要

Formation of the anomalous cellular structure in (100) GaSb with Sn ion-implantation at a low temperature is investigated by cross-sectional scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. A fine structure consisting of many cells was formed on GaSb surface implanted by 60 keV Sn. The cell diameter and the thickness of the walls partitioning the cells were about 50 and 10 nm, respectively, which are almost constant in the range of the ion dose 4.0×10~(14)-8.9×10~(14) ions/cm~(2). The depth of the cells increased linearly with increasing ion dose, from 100 nm in the sample implanted with a dose of 4.0×10~(14) ions/cm~(2) to 220 nm in that implanted with a dose of 8.9×10~(14) ions/cm~(2). From the experimental results, it is concluded that the development of the cellular structure originates in formation of the voids. An improved defect formation mechanism based on movement of the implantation-induced point defects is discussed.