Self‐consistent simulation of quantum transport in dual‐gate field‐effect transistors

摘要

A quantum transport model to investigate lateral resonant tunneling through one‐dimensional states in a dual‐gate field‐effect transistor is presented. A self‐consistent scheme based on the iterative extraction orthogonalization method for calculating the electronic properties of two‐dimensionally confined carriers is employed. The model successfully reproduces the multiple negative differential resistance in theI‐Vcharacteristics; however, it is necessary to invoke nonuniformities and disorder at the heterointerface of the resonant tunneling structure to explain the observation of multiple negative differential resistance in theI‐Vcharacteristics.