A GaInAsP/InP laser (lgr;g=1.3 mgr;m) on grooved substrate with a lenshyphen;shaped active layer, in which the current blocking junction is grown exclusively outside of the groove, has been fabricated by singlehyphen;step liquid phase epitaxy. This technique is based on the preferential growth effects of InP and GaInAsP on the (100) oriented substrate with lsqb;011macr;rsqb; directed grooves. Under cw operation, low threshold current (38 mA), high output power (40 mW/facet), and high external differential quantum efficiency (56percnt;) are accomplished; fundamental transverse mode operation up to an output of 30 mW/facet is verified. These successful characteristics are realized by the introduction of the inner current confining layer.
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