Deep-level transient spectroscopy of dislocation-related defects in epitaxial multilayer structures

摘要

Dislocated Si, SiGe, SiC, and SiGeC n-type heterostructures, grown by molecular beam epitaxy, were characterized by capacitance-voltage profiling and deep-level transient spectroscopy. Exclusively dislocation-related defects were found in the different layers, which correspond to the well-known defects found in plastically deformed silicon.