Differential Hall measurements at 77 K were done on 150hyphen;keV boron implantedphyphen;type mercuryhyphen;cadmiumhyphen;telluride (HgCdTe).n+layers formed as a result of implantation with various doses were very sharp and thicknesses of then+layers were found to depend on boron dose. The sheet carrier concentration tends to saturate above the dose 1times;1013cmminus;2.
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