Effect of the statistical shift on the anomalous conductivities ofnhyphen;type hydrogenated amorphous silicon

摘要

We calculated the shift of Fermi energyEFwith temperature, using a model density of states for hydrogenated amorphous silicon (ahyphen;Si:H) similar to that of deep level transient spectroscopy results, by a numerical method. The conductivity sgr; was calculated from the calculatedEFas a function of temperature. It was found that some features of anomalous transport phenomena ofnhyphen;typeahyphen;Si:H such as kinks or the continuous bending of logthinsp;sgr; vs 1/Tcurves and the Meyerndash;Neldelhyphen;type preexponential factors can be explained, at least in part, by the statistical shift alone.