Strain relaxation kinetics in Si1−xGex/Si heterostructures

摘要

A semiempirical kinetic model is presented which maps out the thermal budget for processing of strained layer devices through epitaxial growth and postgrowth anneals. Misfit strain relaxation in Si1−xGex/Si heterostructures by the injection and propagation ofa/2 ⟨110⟩ 60°‐type misfit dislocations has been studied for a range of geometries and dimensions. Strained layer superlattices, Si1−xGexalloy layers, 0