Pt and PtSixSchottky contacts onn‐type bgr;‐SiC

摘要

Schottky barrier rectifying contacts usinge‐beam‐deposited platinum have been demonstrated onn‐type bgr;‐SiC. The electrical properties of these contacts were examined as a function of annealing temperature usingI‐VandC‐Vmeasurements. Auger analysis was used to study the metallurgical reactions at the Pt/SiC interface. Short annealing cycles in the 350–800 °C temperature range led to formation of a mixed structure of PtSixand PtC at the interface, evidenced by migration of platinum into the SiC above 350 °C. The barrier height was found to increase from 0.95 to 1.35 eV with increasing annealing temperature. The rectifying characteristics improved following an initial 350 °C anneal and remained relatively stable up to 800 °C.