Interaction of molecular hydrogen with trapped holeErsquo;centers in irradiated and high field stressed metal/oxide/silicon oxides

摘要

We explore the effect of forming gas anneals at 110thinsp;deg;C onErsquo;centers in metal/oxide/semiconductor oxides subjected to gamma, electron, and vacuum ultraviolet irradiation, as well as high electric field stressing. We find that this brief lowhyphen;temperature anneal substantially reducesErsquo;density in all cases, clearly demonstrating that hydrogen reacts readily with theErsquo;sites. Although this work confirms a recent report of the reactivity ofErsquo;and hydrogen we fail to detect the reported reaction product known as the 74hyphen;G doublet.