Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy

摘要

Using solid-source molecular-beam epitaxy with a rf-plasma source, we have grown GaInNAs/GaAs single-quantum-well lasers operating at 1.32 μm. For a broad-area oxide stripe, uncoated Fabry-Perot laser with a cavity Iength of 1600 μm, the threshold current density is 546 A/cm~(2) at room temperature. The internal quantum efficiency for these lasers is 80, while the materials losses are 7.0 cm~(-1). A characteristic temperature of 104 K was measured in the temperature range from 20 to 80℃. Optical output up to 40 mW per facet under continuous-wave operation was achieved for these uncoated lasers at room temperature.