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首页> 外文期刊>journal of applied physics >Negative persistent photoeffect on cyclotron resonance in InAs/Al0.5Ga0.5Sb quantum wells
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Negative persistent photoeffect on cyclotron resonance in InAs/Al0.5Ga0.5Sb quantum wells

机译:Negative persistent photoeffect on cyclotron resonance in InAs/Al0.5Ga0.5Sb quantum wells

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摘要

Farhyphen;infrared magnetohyphen;optical spectroscopy has been used to investigate the negative persistent photoconductivity (NPPC) effect in InAs/Al0.5Ga0.5Sb quantum wells at low temperatures. After aninsitucrosshyphen;gap illumination, the electron density in the InAs well is reduced by about 28percnt;, and the cyclotron effective mass decreases from (0.0342plusmn;0.0002)m0to (0.0322plusmn;0.0002)m0. The time scale for the NPPC buildup transient determined from the results of a photonhyphen;dose experiment is on the order of 10 ms with an illumination power flux of sim;10 mW/cm2.

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