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Switching the magnetic configuration of a spin valve by current-induced domain wall motion

机译:通过电流引起的畴壁运动切换自旋阀的磁性配置

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摘要

We present experimental results on the displacement of a domain wall by injection of a dc current through the wall. The samples are 1-μm-wide long stripes of a CoO/Co/Cu/NiFe classical spin-valve structure. The stripes have been patterned by electron-beam lithography. A neck has been defined at 1/3 of the total length of the stripe and is pinning center for the domain walls, as shown by the steps of the giant magnetoresistance curves at intermediate levels (1/3 or 2/3) between the resistances corresponding to the parallel and antiparallel configurations. We show by electric transport measurements that, once a wall is trapped, it can be moved by injecting a dc current higher than a threshold current of the order of magnitude of 10~(7) A/cm~(2). We discuss the different possible origins of this effect, i.e., local magnetic field created by the current and/or spin transfer from spin-polarized current.
机译:我们提出了通过向壁注入直流电流来位移畴壁的实验结果。样品是 1 μm 宽的 CoO/Co/Cu/NiFe 经典自旋阀结构的长条纹。这些条纹是通过电子束光刻技术绘制的。在条纹总长度的 1/3 处定义了一个颈部,并且是畴壁的固定中心,如对应于平行和反平行配置的电阻之间中间水平(1/3 或 2/3)的巨型磁阻曲线的步长所示。我们通过电传输测量表明,一旦墙壁被困住,可以通过注入高于阈值电流的直流电流来移动它,阈值电流的数量级为 10~(7) A/cm~(2)。我们讨论了这种效应的不同可能起源,即由电流和/或自旋极化电流的自旋转移产生的局部磁场。

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