Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector

摘要

A ten-stacked self-assembled InAs/GaAs quantum-dot infrared photodetector operated in the 2.5-7 μm range by photovoltaic and photoconductive mixed-mode near-room-temperature operation (≥250 K) was demonstrated. The specific peak detectivity D~(*) is 2.4×10~(8) cm Hz~(1/2)/W at 250 K. The use of high-band-gap Al_(0.3)Ga_(0.7)As barriers at both sides of the InAs quantum-dot structure and the long carrier recombination time are the key factors responsible for its near-room-temperature operation.