Pressure dependence of electrical properties of metalhyphen;oxide semiconductor transitors

摘要

This paper gives some results on the effects of hydrostatic pressure on electrical characteristics of metalhyphen;oxide semiconductor transistor devices . An enhancement of about 4percnt;ndash;5percnt; in the drainhyphen;source current has been obtained for pressures of the order of 4000 bars. A study of this effect shows that the current increase in essentially due to a change of the mobility of carriers at the interface, rather than to a modification of the oxide layer or interface.