Dielectric properties of oriented PbZrO3 thin films grown by sol-gel process

摘要

Antiferroelectric PbZrO3 (PZ) films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates using a sol-gel process. The films with perovskite structure showed highly preferred orientation. An antiferroelectric phase was identified by the presence of 1/4{110} superlattice spots in a 001 selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 muC/cm(2). Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO3 on Pt/Ti/SiO2/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops. (C) 2002 American Institute of Physics. References: 20