Carriers induced at the end of a quantum well

摘要

The charge distribution of carriers induced at the end of a quantum well by an auxiliary confining potential perpendicular to the plane of the well has been calculated for two examples. The first example considers a selectively doped layer grown epitaxially on a cleaved quantum well structure. The induced electron density in this case is found to be approximately proportional to the width of the well, with an additional charge from the dopants that project outside the well and with a cutoff at very small well widths as the quantum state is driven above the band offset. The second example considers the effect of surface pinning of the Fermi level above the conduction band edge of InAs.