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Effect of third‐element additions on properties of Co‐Cr‐based films

机译:第三元素添加对Co‐Cr基薄膜性能的影响

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摘要

The fundamental effects of adding several elements to the Co‐Cr system on the properties of Co‐Cr‐based films were extensively investigated. Tantalum, molybdenum, vanadium, and rhenium were chosen as the additives. A large amount of each element was added to a Co–17‐at.  Cr film. Ta addition improved the squareness and suppressed the in‐plane coercive force without lowering the perpendicular coercive force for the films with perpendicular magnetization. All the additives were effective in suppressing the grain growth. The ternary alloy films were likely to have finer grains than Co‐Cr films. Ta was found to be the most advantageous in a wide range of the content, from the total balance of squareness, coercive force, and grain size. The recording characteristics of Co‐Cr‐Ta films were also examined in comparison with those of Co‐Cr films. The recording density and the signal‐to‐noise ratio of Co‐Cr‐Ta films were appreciably higher than those of Co‐Cr films.
机译:广泛研究了在Co‐Cr体系中添加几种元素对Co‐Cr基薄膜性能的基本影响。钽、钼、钒和铼被选为添加剂。将大量每种元素添加到Co-17‐at中。% Cr 薄膜。Ta的加入提高了垂直磁化薄膜的平整度,抑制了面内矫顽力,但未降低垂直磁化矫顽力。所有添加剂均能有效抑制籽粒生长。三元合金薄膜可能比Co‐Cr薄膜具有更细的晶粒。从方形度、矫顽力和晶粒尺寸的总平衡来看,Ta在广泛的含量范围内是最有利的。还比较了Co‐Cr‐Ta薄膜与Co‐Cr薄膜的记录特性。Co‐Cr‐Ta薄膜的记录密度和信噪比明显高于Co‐Cr薄膜。

著录项

  • 来源
    《journal of applied physics》 |1990年第10期|6394-6398|共页
  • 作者

    Masayuki Sagoi; Tetsuo Inoue;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
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