We propose a detector of terahertz (THz) radiation based on a high-electron mobility transistor (HEMT) with a lateral Schottky junction (LSJ) as the drain contact. The HEMT channel serves as a resonant cavity for the plasma oscillations induces by incoming THz radiation. Using the developed device model, we demonstrate that at the frequencies of THz radiation coinciding with the plasma resonant frequencies, the amplitude of the ac potential drop across the LSJ and, therefore, the rectified component of the current used for the detection can be resonantly large. This can result in the responsivity of the LSJ-HEMT detector under consideration significantly exceeding the responsivity of the standard Schottky detectors. The characteristics of LSJ-HEMT detectors are compared with those of LSJ-diode detectors with ungated channels.
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