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Lattice effects of doping the Mn sites in La_(0.5)Ca_(0.5)MnO_(3)

机译:La_(0.5)Ca_(0.5)MnO_(3)中掺杂Mn位点的晶格效应

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摘要

The structure, magnetic, and transport properties of La_(0.5)Ca_(0.5)Mn_(1-x)M_(x)O_(3) (0≤x≤0.1) with M=Ge and Sn have been investigated systematically. A significant lattice expansion is observed in the Sn-doped samples, but not in the Ge-doped ones. At the same time, a substitution of Mn by Ge has little effect on Curie temperature (T_(C)), but increases the metal-insulator transition temperature (T_(P)). In contrast, the T_(C) decreases sharply for Sn doping, while the T_(P) shows an increase for x0.02. Compared with Ge doping, Sn doping is more effective in destroying the charge-ordered state. The difference in local lattice distortions due to the Ge and Sn doping is believed to be responsible for the present observations.
机译:系统研究了M=Ge和Sn的La_(0.5)Ca_(0.5)Mn_(1-x)M_(x)O_(3) (0≤x≤0.1)的结构、磁性和输运性能.在Sn掺杂样品中观察到明显的晶格膨胀,但在Ge掺杂样品中没有观察到晶格膨胀。同时,用Ge取代Mn对居里温度(T_(C))影响不大,但增加了金属-绝缘体转变温度(T_(P))。相比之下,Sn掺杂的T_(C)急剧下降,而x0.02的降低。与Ge掺杂相比,Sn掺杂对电荷有序态的破坏更有效。由于Ge和Sn掺杂导致的局部晶格畸变的差异被认为是造成本观测结果的原因。

著录项

  • 来源
    《Journal of Applied Physics》 |2000年第10期|5924-5927|共4页
  • 作者单位

    State Key Laboratory of Magnetism, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 应用物理学;
  • 关键词

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