Metalorganic vapor-phase epitaxially grown GaN films have been studied using beam positron annihilation spectroscopy. Positron lifetime and Doppler broadening of annihilation radiation measurements indicate that defects, probably Ga vacancies, are reduced in concentration when films are doped with Mg, as previously observed by other workers. In lightly doped films a homogeneous layer with a minimum defect concentration is present from just below the surface, to a depth of around 0.1 μm. For heavily doped films, there is evidence of a further substantial decrease in the defect concentration following an anneal to 900℃. The effects of impurities and defects are discussed.
展开▼
